Referenced Items are not available for this document.
In this paper, influences of program/erase (P/E) cycles on the defect generation in a SONOS flash memory cell are studied by using a variable-amplitude low-frequency charge-pumping technique. We observe that P/E cycles would generate new oxide and nitride traps, and degraded cell retention is observed. Besides, the increase of oxide- and nitride-trap densities follows a power-law behavior as a function of P/E cycles. We also observe that these stress-created oxide and nitride traps are unstable and will be eliminated rapidly during high-temperature storage.
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:9
,
Issue:
3
)
Date of Publication: Sept. 2009
- Page(s):
- 356 - 360
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 10847268
- Digital Object Identifier :
- 10.1109/TDMR.2009.2020992
- Product Type:
- Journals & Magazines
- Date of Publication :
- 21 April 2009
- Date of Current Version :
- 28 August 2009
- Issue Date :
- Sept. 2009
- Sponsored by :
- IEEE Electron Devices Society
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