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High-Speed, Low-Current-Density 850 nm VCSELs

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6 Author(s)
Westbergh, P. ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg ; Gustavsson, J.S. ; Haglund, A. ; Skold, M.
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We report on the design, fabrication, and evaluation of large-aperture, oxide-confined 850 nm vertical cavity surface emitting lasers (VCSELs) with high modulation bandwidth at low current densities. We also compare the use of InGaAs and GaAs quantum wells (QWs) in the active region. Both VCSELs reach an output power of 9 mW at room temperature, with a thermal resistance of 1.9deg C/mW. The use of InGaAs QWs improves the high-speed performance and enables a small-signal modulation bandwidth of 20 GHz at 25degC and 15 GHz at 85degC. At a constant bias current density of only 11 kA/cm2, we generate open eyes under large-signal modulation at bit rates up to 25 Gbit/s at 85degC and 30 Gbit/s at 55degC.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 3 )