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Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates

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9 Author(s)
Oliver, Mark H. ; School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA ; Schroeder, Jeremy L. ; Ewoldt, David A. ; Wildeson, Isaac H.
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An intermediate ZrN/AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of ∼1000 °C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1 μm thick grown on ZrN/AlN/Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230 arc sec.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 2 )

Date of Publication:

Jul 2008

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