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Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films

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5 Author(s)
Akiyama, M. ; Measurement Solution Research Center, National Institute of Advanced Industrial Science and Technology, 807-1 Shuku, Tosu, Saga 841-0052, Japan ; Kamohara, Toshihiro ; Kano, K. ; Teshigahara, A.
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The authors have investigated the influence of oxygen concentration in sputtering gas on the piezoelectric response of aluminum nitride (AlN) thin films prepared on silicon substrates. The piezoelectric response strongly depends on the oxygen concentration, and changes from +6.8 to -7.0 pC/N with increasing oxygen concentration from 0% to 1.2%. The polar direction drastically inverts from the Al polarity to N polarity. When the oxygen concentration in sputtering gas was 1.2%, the oxygen concentration in the AlN films was 7 at. %. Furthermore, the growth rate of the AlN films gradually decreases with increasing oxygen concentration in sputtering gas.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 2 )

Date of Publication:

Jul 2008

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