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Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector

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4 Author(s)
Ray-Hua Horng ; Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan ; Zheng, Xinhe ; Hsieh, Chuang-Yu ; Dong-Sing Wuu

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2961008 

Light extraction enhancement of InGaN–GaN light-emitting diode (LED) is demonstrated with double-side roughening both on the p-GaN surface and the micropillar undoped GaN as well as an omnidirectional reflector via patterning sapphire substrate, wafer-bonding, laser lift-off, and chemical wet etching technologies. This device design enhances the light output power up to 77% compared to the conventional LED with a single roughened p-GaN on patterned sapphire substrate at an injection current of 350 mA. Due to the employment of Si carrier, the junction temperature measurement at 350 mA yields a 46.6 °C lower than that of the conventional LEDs.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 2 )

Date of Publication:

Jul 2008

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