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Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes

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6 Author(s)
Liu, J.P. ; Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA ; Ryou, J.-H. ; Dupuis, R.D. ; Han, J.
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Carrier distributions governed by hole transport in InGaN/GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in LEDs with conventional MQW active regions at a current of 20 mA. A decrease in the thickness or the height of the quantum-well potential barrier enhanced hole injection into the MQWs located near the n-GaN layer. Reducing the thickness of a GaN quantum-well barrier between the blue QW and green QW did not degrade the electroluminescence (EL) intensity of the LED. In contrast, reducing the potential height of the barrier with material of possibly compromised quality resulted in a degradation of the EL intensity of the LED.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 2 )