By Topic

Bias-stress induced contact and channel degradation in staggered and coplanar organic field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Richards, Tim ; Cavendish Laboratory, J.J. Thompson Avenue, Cambridge CB3 0HE, United Kingdom ; Sirringhaus, Henning

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have investigated the dependence of bias-stress induced degradation in organic field-effect transistors on the device configuration. We show that separation of contact and channel effects is essential for understanding bias-stress instabilities. In coplanar device configurations, an increase in source contact resistance during current flow is primarily responsible for a rapid device degradation. In contrast, in staggered device configurations, the significantly slower reduction in current is primarily due to charge trapping in the channel leading to an increase in threshold voltage, while the contacts themselves do not exhibit significant degradation.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 2 )