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Electronic trap characterization of the Sc2O3/La2O3 high-κ gate stack by scanning tunneling microscopy

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9 Author(s)
Ong, Y.C. ; Nanyang Technological University, School of Electrical and Electronic Engineering, Nanyang Avenue, Singapore 639798, Singapore ; Ang, D.S. ; Pey, K.L. ; Wang, Z.R.
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The tunneling current versus voltage characteristic of the Sc2O3/La2O3/SiOx high-κ gate stack is examined using scanning tunneling microscopy in ultrahigh vacuum. Different measurement bias polarities allow information on the location (i.e., in the high-κ or interfacial SiOx layer) of the electronic traps to be extracted. Two types of localized leakage sites may be distinguished. Lowering of the electron barrier height and trap-assisted tunneling are proposed as the two leakage mechanisms.

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Applied Physics Letters  (Volume:92 ,  Issue: 2 )