By Topic

Growth and physical property of epitaxial Co70Fe30 thin film on Si substrate via TiN buffer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ji, C.-X. ; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA ; Lu, Feng ; Chang, Y.Austin ; Yang, J.Joshua
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2834706 

Epitaxial Co70Fe30 films with the bcc structure were grown on a Si(001) substrate with TiN as a buffer by sputtering technique. The x-ray diffraction results confirmed the epitaxial nature of the films and the crystallographic relationship was determined as Co70Fe30(002)<110>//TiN(002)<100>//Si(004)<100>. The surface morphology characterized by atomic force microscopy on our films revealed that smooth surfaces could be obtained at growth temperatures below 350 °C. The strain state of 60 nm epitaxial Co70Fe30 films was studied as a function of growth temperature. Magnetization hysteresis loops of the films grown at 300 °C were measured using superconducting quantum interface device magnetometer.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 2 )