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Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

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7 Author(s)
Fardin, E.A. ; School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria 3001, Australia ; Holland, A.S. ; Ghorbani, K. ; Akdogan, E.K.
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Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25–400 nm. At a critical thickness of ∼200 nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400 nm film. Microwave properties of the films were measured from 1 to 20 GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200 nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

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Applied Physics Letters  (Volume:89 ,  Issue: 18 )