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Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN/Al2O3 prepared by pulsed laser deposition

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5 Author(s)
Lee, Sang-A ; Department of Physics, Pusan National University, Busan 609-735, Korea ; Hwang, Jae-Yeol ; Kim, Jong-Pil ; Jeong, Se-Young
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(201)-oriented β-Ga2O3/GaN thin films were epitaxially grown by pulsed laser deposition. These films have the specific in-plane orientation, which was confirmed by φ scans of Ga2O3 (111) and (311) reflections. When oxygen flow rate was increased, the surface morphologies and roughness of β-Ga2O3 drastically changed. The β-Ga2O3/GaN structure showed a stable and sharp interface and uniform elemental distribution in depth. The dielectric constant and memory window of β-Ga2O3/GaN were about 13.9 and 0.50 V for oxygen flow rate of 5 SCCM (SCCM denotes cubic centimeter per minute at STP).

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 18 )

Date of Publication:

Oct 2006

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