Growth of single-phase In₂Se₃ by using metal organic chemical vapor deposition with dual-source precursors

Single-phase γ-In₂Se₃ thin films have been prepared by the metal organic chemical vapor deposition technique using dual-source precursors, trimethylindium, and hydrogen selenide to obtain a different VI/III ratio by independent adjustment of the precursors’ flow rate. 2 in Si(111) and Si(100) wafers are used as substrates. The films have been characterized by x-ray diffraction and scanning electron microscopy. The single-phase γ-In₂Se₃ films can be grown on both Si(111) and Si(100) substrates. The optical properties of the films have been studied by photoluminescence measurements. Strong exciton emissions were observed at around 2.14 eV at 20 K. The band gap of γ-In₂Se₃ at room temperature is estimated at approximately 1.93 eV.