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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:18 Help

Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping

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4 Author(s)
Elfving, A. ; Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping, Sweden ; Zhao, M. ; Hansson, G.V. ; Ni, W.‐X.

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Strain relaxation of SiGe/Si(110) has been studied by x-ray reciprocal space mapping. To get information about the in-plane lattice mismatch in different directions, two-dimensional maps around, e.g., (260) and (062) reciprocal lattice points have been obtained from Si0.8Ge0.2/Si(110) samples, which were exposed to different annealing conditions. The in-plane lattice mismatch was found to be asymmetric with the major strain relaxation observed in the lateral [001] direction. This was associated with the formation and propagation of dislocations oriented along [110]. The relaxation of as-grown structures during postannealing is thus different from relaxation during growth, which is mainly along [110].

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 18 )

Date of Publication: Oct 2006

Page(s):
181901 - 181901-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2364861
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2006

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