Cart (Loading....) | Create Account
Close category search window

Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kang, Hong Seong ; Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul 120-749, Korea ; Gun Hee Kim ; Dong Lim Kim ; Chang, Hyun Woo
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The photoluminescence spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton of 3.3437 eV and a transition between free electrons and acceptor levels of 3.2924 eV. Calculated acceptor binding energy is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by the analysis of x-ray photoelectron spectroscopy. p-type formation mechanism of As doped ZnO thin film is related to the AsZn–2VZn complex model. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 18 )

Date of Publication:

Oct 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.