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Ferroelectric and piezoelectric properties of Na0.52K0.48NbO3 thin films prepared by radio frequency magnetron sputtering

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5 Author(s)
Lee, Hai Joon ; Department of Physics, University of Ulsan, Ulsan, 680-749, Republic of Korea ; Kim, Ill Won ; Kim, Jin Soo ; Won Ahn, Chang
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Ferroelectric Na0.52K0.48NbO3 (NKN) thin film on Pt/Ti/SiO2/Si substrate was prepared using the radio frequency magnetron sputtering method. The single phase and grain morphologies of NKN were confirmed by x-ray diffraction and atomic force microscopy analysis, respectively. The remnant polarization Pr and coercive electric field Ec of NKN film were 22.5 μC/cm2 and 90 kV/cm, respectively. The NKN film displayed low frequency dielectric dispersion in the temperature range 25–500 °C. The leakage current density of the film was 3.0×10-7 A/cm2 at 100 kV/cm. The piezoelectric constant d33 was estimated to be 45 pm/V using the piezoelectric force microscopy.

Published in:
Applied Physics Letters  (Volume:94 ,  Issue: 9 )

Date of Publication: Mar 2009

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