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High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate

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3 Author(s)
Myronov, M. ; Department of Physics, The University of Warwick, Coventry CV4 7AL, United Kingdom ; Leadley, D.R. ; Shiraki, Y.

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Epitaxial growth of a compressively strained Ge quantum well (QW) on an ultrathin, 345 nm thick, Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate (VS) has been demonstrated. The VS, grown with a low temperature Si0.4Ge0.6 seed layer on a Si(001) substrate, is found to be fully relaxed and the Ge QW is fully strained. The temperature dependence of Hall mobility and carrier density clearly indicates a two-dimensional hole gas in the Ge QW. At room temperature, which is more relevant for electronic devices applications, the samples show a very high Hall mobility of 1235 cm2V-1s-1 at a carrier density of 2.36×1012 cm-2.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 9 )