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Structural analyses of strained SiGe wires formed by hydrogen thermal etching and Ge-condensation processes

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8 Author(s)
Tezuka, T. ; MIRAI-Association of Super-Advanced Electronics Technology (ASET), 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan ; Toyoda, E. ; Irisawa, T. ; Hirashita, N.
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Strained SiGe-wire structures formed by a thermal oxidation of SiGe-on-insulator (SGOI) fins after an anisotropic gas etching in atmospheric hydrogen are investigated in terms of morphology, strain, and crystalline defects. It is found that vertical and smooth {110} sidewalls emerged on the SGOI fins after the hydrogen etching and that the SiGe wires consisted of a Si-rich core region and a surrounding Ge-rich layer formed by the Ge-condensation mechanism through the oxidation. Detailed strain analyses reveal that uniaxial and compressive strain accumulated in the Ge-rich layer via an elastic lattice deformation without generating dislocations.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 8 )

Date of Publication:

Feb 2009

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