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The structural quality of AlxGa1-xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy

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7 Author(s)
Hawkridge, M.E. ; Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road MS62R0209/213, Berkeley, California 94720, USA ; Liliental-Weber, Z. ; Kim, Hee Jin ; Choi, Suk
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AlxGa1-xN layers of varying composition (0.5≪xAl≪1.0) grown in the digitally alloyed modulated precursor epitaxial regime employing AlN and GaN binary sublayers by metal organic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (xAl≪0.75), a compositional inhomogeneity associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.

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Applied Physics Letters  (Volume:94 ,  Issue: 7 )