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Browse Journals & Magazines > Applied Physics Letters ...> Volume:94 Issue:7 Help

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

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9 Author(s)
Pereira, J. ; GREMI, Université d’Orléans, CNRS, BP6744, 45067 Orléans Cedex 2, France ; Pichon, L.E. ; Dussart, R. ; Cardinaud, C.
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The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.

Published in:
Applied Physics Letters  (Volume:94 ,  Issue: 7 )

Date of Publication: Feb 2009

Page(s):
071501 - 071501-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3085957
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2009

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