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Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution

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8 Author(s)
Kim, Kyoung-Kook ; Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Republic of Korea ; Lee, Sam-dong ; Kim, Hyunsoo ; Jae-Chul Park
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We report a dramatic increase in the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) by ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode. ZnO nanorods were grown into aqueous solution at the low temperature of 90 °C. With 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was increased by about 57% with no increase in a forward voltage over the conventional LEDs with planar ITO. The increased light extraction by the ZnO nanorod arrays is due to the formation of sidewalls and a rough surface, resulting in a multiple photon scattering at the LED surface.

Published in:
Applied Physics Letters  (Volume:94 ,  Issue: 7 )

Date of Publication: Feb 2009

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