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Zero-biased near-ultraviolet and visible photodetector based on ZnO nanorods/n-Si heterojunction

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8 Author(s)
Huang, Huihui ; Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, and Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan 430072, People’s Republic of China ; Fang, Guojia ; Mo, Xiaoming ; Yuan, Longyan
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N-ZnO nanorods/n-silicon heterojunction was fabricated by growth of ZnO nanorods on a n-type silicon (111) wafer with a low-temperature aqueous solution method. Capacitance-voltage measurements revealed that after annealing at 900 °C in O2 ambient for 1 h, the heterojunction changed from abrupt N-ZnO nanorods/n-silicon to graded P-ZnO/n-silicon junction. The annealed diode showed good photoresponse in both the ultraviolet and visible regions with responsivity around 0.3 and 0.5 A/W without bias. The photoresponses toward ultraviolet and visible light were enhanced when the diode was under reverse and forward bias, respectively. The results were discussed in terms of phosphorus diffusion process and the band diagrams of the heterojunctions in this work.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 6 )

Date of Publication:

Feb 2009

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