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Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application

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7 Author(s)
Yanli Pei ; International Advanced Research and Education Organization, Tohoku University, 6-6-03 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan ; Chengkuan Yin ; Nishijima, M. ; Kojima, T.
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In this letter, the formation of high density tungsten nanodots (W-NDs) embedded in silicon nitride via a self-assembled nanodot deposition is demonstrated. In this method, tungsten and silicon nitride are cosputtered in high vacuum rf sputtering equipment. The W-NDs with small diameters (1–1.5 nm) and high density (∼1.3×1013/cm2) were achieved easily by controlling W composition; this is the ratio of total area of W chips to that of silicon nitride target. The metal-oxide-semiconductor memory device was fabricated with high density W-NDs floating gate and high-k HfO2 blocking dielectric. A wide range memory window (0–29 V) was obtained after bidirectional gate voltages sweeping with range of ±1–±23 V. It is feasible to design the memory window with propriety power consumption for nonvolatile memory application.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 6 )

Date of Publication:

Feb 2009

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