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InGaN/GaN triangular quantum wells (QWs) are investigated theoretically, and the electron-hole wave-function overlap and optical gain characteristics are analyzed. The strong internal piezoelectric field is taken into account to explain the major difference between the optical properties of triangular QWs and conventional rectangular QWs. Our calculations reveal that triangular QWs, in comparison to rectangular QWs, provide higher electron-hole wave-function overlap and are less affected by the quantum confined Stark effect. Furthermore, triangular QWs exhibit increased optical gain and higher polarization degree, which are beneficial to GaN-based light emitting devices.