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Direct lithographic top contacts for pentacene organic thin-film transistors

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2 Author(s)
Kuo, C.C. ; Corning Incorporated, Corning, New York 14831, USA ; Jackson, T.N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3050110 

We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2/V-s. Contact resistance extracted from these OTFTs is about (5×107)–(5×108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method’s value for fabricating organic electronics.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 5 )

Date of Publication:

Feb 2009

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