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Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric

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5 Author(s)
Walser, M.P. ; Laboratory for Solid State Physics, ETH Zurich, 8093 Zurich, Switzerland ; Kalb, W.L. ; Mathis, T. ; Brenner, T.J.
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We present results on small-molecule p- and n-type organic semiconductors in combination with the highly water repellent fluoropolymer Cytop™ as the gate dielectric. Using pentacene and N,N-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide (PTCDI-C13), we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The combined p- and n-type field-effect transistors show nearly ideal characteristics, very small hysteresis, and similar saturation mobility (∼0.2 cm2/Vs). Particularly PTCDI-C13 thin-film transistors exhibit a remarkable performance in the subthreshold regime if chromium is used as contact material for electron injection: a near zero onset and a subthreshold swing as low as 0.6 V/decade.

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Applied Physics Letters  (Volume:94 ,  Issue: 5 )