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Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors

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4 Author(s)
Park, Jin-Seong ; R & D Center, Samsung Mobile Display, 428-5, Gongse-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-577, Republic of Korea ; Kyeong Jeong, Jae ; Yeon-Gon Mo ; Sangwook Kim

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3075612 

We investigated the effect of the high-k TiOx (k∼40) gate dielectric on the mobility FE) of indium-gallium-zinc oxide (IGZO) transistors. As the thickness of the TiOx layer at the interface of the IGZO channel and SiNx gate dielectric layer increased from 2 to 8 nm, the μFE value was monotonously reduced from 9.9 to 1.8 cm2/Vs. The degradation of the mobility was attributed to the Coulomb scattering mechanism rather than the phonon scattering mechanism of the high-k TiOx layer based on the behavior of the temperature-dependent mobilities for all of the IGZO transistors.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 4 )

Date of Publication:

Jan 2009

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