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GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

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3 Author(s)
Rodriguez, J.B. ; Institut d’Electronique du Sud, UMR 5214 CNRS, Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France ; Cerutti, L. ; Tournie, E.

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We report on a Sb-based type-I laser grown on GaAs substrate, emitting continuous wave at room temperature around 2.2 μm. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum wells embedded in AlGaAsSb barriers. Despite the large lattice mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50 °C with threshold current densities in the range of 1.5–2.2 kA/cm2. An optical output power of 3.7 mW was obtained at 20 °C.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 2 )

Date of Publication:

Jan 2009

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