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Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere

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3 Author(s)
Yan, Hu ; Laboratory of Organic Robotics, Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan ; Kagata, Tsubasa ; Okuzaki, H.

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Ambipolar field-effect transistors (FETs) were fabricated with a heterostructure of pentacene/C60 in which the C60 layer functioned as an n-type channel while the pentacene layer functioned as both a p-type channel and a sealing capsule for the unstable C60 layer. The ambipolar FET, operating in an ambient atmosphere, exhibited a hole mobility of 0.2 cm2/Vs with a threshold voltage of -2.3 V and an electron mobility of 0.04 cm2/Vs with a threshold voltage of 66 V with moderately good air stability. However, the threshold voltage and gate voltage for the n-channel operation must be improved for practical applications.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 2 )

Date of Publication:

Jan 2009

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