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Browse Journals & Magazines > Applied Physics Letters ...> Volume:94 Issue:14 Help

Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

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6 Author(s)
Liu, Day-Shan ; Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan ; Lin, Tan-Wei ; Huang, Bing-Wen ; Fuh-Shyang Juang
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3116613 

Amorphous titanium oxide (a-TiOx:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 °C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance the associated light extraction efficiency. The refractive index, porosity, and photocatalytic effect of the deposited films are correlated strongly with the deposition temperatures. The efficiency is enhanced by a factor of ∼1.31 over that of the uncoated LEDs and exhibited an excellent photocatalytic property after an external UV light irradiation. The increase in the light extraction is related to the reduction in the Fresnel transmission loss and the enhancement of the light scattering into the escape cone by using the graded-refractive-index a-TiOx:OH film with porous structures.

Published in:
Applied Physics Letters  (Volume:94 ,  Issue: 14 )

Date of Publication: Apr 2009

Page(s):
143502 - 143502-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3116613
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2009

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