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Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

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6 Author(s)
Korytov, M. ; CRHEA-CNRS, rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France and University of Nice Sophia-Antipolis, Parc Valrose, 06103 Nice, France ; Benaissa, M. ; Brault, J. ; Huault, T.
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The impact of the capping process on the structural and morphological properties of GaN quantum dots (QDs) grown on fully relaxed Al0.5Ga0.5N templates was studied by transmission electron microscopy. A morphological transition between the surface QDs, which have a pyramidal shape, and the buried ones, which have a truncated pyramid shape, is evidenced. This shape evolution is accompanied by a volume change: buried QDs are bigger than surface ones. Furthermore a phase separation into Al0.5Ga0.5N barriers was observed in the close vicinity of buried QDs. As a result, the buried QDs were found to be connected with the nearest neighbors by thin Ga-rich zones, whereas Al-rich zones are situated above the QDs.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 14 )

Date of Publication:

Apr 2009

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