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Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

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5 Author(s)
Lin, Chih-Ming ; Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan ; Wen-Chieh Shih ; Chang, Ingram Yin-ku ; Pi-Chun Juan
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Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO3/Y2O3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise memory window of 0.92 V. The minimum leakage current density is 2×10-7 A/cm2 at an applied voltage of 5 V. The capacitance-voltage memory window as a function of the sweep voltage range was investigated. The IDS-VGS curves of metal-ferroelectric-insulator-semiconductor transistors show a maximum memory window of 0.84 V. The drain current on/off ratio maintained more than three orders of magnitude after an elapsed time of 104 s.

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Applied Physics Letters  (Volume:94 ,  Issue: 14 )