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Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

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5 Author(s)
Kim, J.B. ; Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA ; Fuentes-Hernandez, C. ; Potscavage, W.J. ; Zhang, X.-H.
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We report on low-voltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100-nm-thick Al2O3 grown by atomic layer deposition as the gate dielectric layer. The Al2O3 gate dielectric shows very small current densities and has a capacitance density of 81±1 nF/cm2. Due to a very small contact resistance, transistors with channel lengths ranging from 100 μm down to 5 μm yield a channel-independent, field-effect mobility of 8±1 cm2/Vs, subthreshold slopes of 0.1±0.01 V/decade, low threshold voltages of 0.4±0.1 V, and high on-off current ratios up to 6×107 (W/L=400/5 μm) at 5 V.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 14 )

Date of Publication:

Apr 2009

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