By Topic

Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Fuster, David ; Instituto de Microelectrónica de Madrid, CNM, CSIC, Isaac Newton 8, Tres Cantos, 28760 Madrid, Spain ; Rivera, Antonio ; Alen, Benito ; Alonso-Gonzalez, Pablo
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4×2)↔(2×4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4×2) surface during the In deposition step and their subsequent crystallization under the As step.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 13 )