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Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

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9 Author(s)
Newman, Scott A. ; Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA ; Kamber, Derrick S. ; Baker, Troy J. ; Wu, Yuan
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Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the <1120>sapphire direction, lateral epitaxial overgrowth AlN films were coalesced over trench regions as wide as 10 μm despite parasitic sidewall and trench growth. Using transmission electron microscopy, a reduction in the dislocation density from 1.6×109 cm-2 in the seed region to less than 1.0×108 cm-2 in the wing region was demonstrated. Atomic force microscopy and cathodoluminescence measurements were also performed to assess the material quality.

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Applied Physics Letters  (Volume:94 ,  Issue: 12 )