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Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes

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6 Author(s)
Kuo, P.-S. ; Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan ; Peng, C.-Y. ; Lee, C.-H. ; Shen, Y.-Y.
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The hole confinement due to the valence band offset of the Si/SiGe/Si quantum well causes the shrinkage of depletion region for the n-type Si/Si0.2Ge0.8/Si Schottky barrier diodes with Pt gates. The capacitance of Si/Si0.2Ge0.8/Si Schottky diodes has approximately two times the capacitance of the control Si device. Moreover, the high electrical field leads to a high thermionic-field emission current and a large image-force lowering at both reverse and forward biases. The conventional capacitor-voltage method cannot be used to accurately measure the barrier height of Si/SiGe/Si quantum well Schottky diodes due to the shrinkage of depletion region.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 10 )