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A model of the defect formation at the bonding interface upon annealing in silicon wafer bonding is proposed in this paper. It is shown that the formation of the bonding defects depends on the thickness of the silicon oxide at the bonding interface. A mechanism of thermal voids formation is suggested based on the hydrogen solubility in amorphous silicon oxide. The interface gas quantity for various thicknesses of the buried oxide is predicted and good correlation with the experimental data is obtained.