By Topic

A quantum ring terahertz detector with resonant tunnel barriers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Huang, G. ; Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122, USA ; Guo, W. ; Bhattacharya, P. ; Ariyawansa, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The electronic properties of InAs/GaAs quantum rings and the characteristics of resonant tunnel intersubband terahertz detectors with quantum ring active regions have been studied. The electronic states of the quantum rings have been calculated and measured by the capacitance-voltage technique. The detectors exhibit extremely low dark current density values ∼5×10-5, 4.7×10-2, and 3.5×10-1 A/cm2 under a -1 V bias at 4.2, 80, and 300 K, respectively. Three prominent response peaks are observed at ∼6.5, 10, and 12.5 THz up to T=120 K. At 80 K, the responsivity of the peaks varies from 0.07 to 0.02 A/W.

Published in:

Applied Physics Letters  (Volume:94 ,  Issue: 10 )