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A quantum ring terahertz detector with resonant tunnel barriers

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5 Author(s)
Huang, G. ; Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122, USA ; Guo, W. ; Bhattacharya, P. ; Ariyawansa, G.
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The electronic properties of InAs/GaAs quantum rings and the characteristics of resonant tunnel intersubband terahertz detectors with quantum ring active regions have been studied. The electronic states of the quantum rings have been calculated and measured by the capacitance-voltage technique. The detectors exhibit extremely low dark current density values ∼5×10-5, 4.7×10-2, and 3.5×10-1 A/cm2 under a -1 V bias at 4.2, 80, and 300 K, respectively. Three prominent response peaks are observed at ∼6.5, 10, and 12.5 THz up to T=120 K. At 80 K, the responsivity of the peaks varies from 0.07 to 0.02 A/W.

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Applied Physics Letters  (Volume:94 ,  Issue: 10 )