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Browse Journals & Magazines > Applied Physics Letters ...> Volume:94 Issue:1 Help

High resolution fluorescence imaging of damage regions in H+ ion implanted Nd:MgO:LiNbO3 channel waveguides

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2 Author(s)
Jaque, D. ; Departamento de Fisica de Materiales C-IV, Facultad de Ciencias, Universidad Autónoma de Madrid, Madrid 28049, Spain ; Chen, Feng

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3064164 

We report on the fluorescence imaging of channel waveguides fabricated by light ion (H+) implantation in neodymium (Nd) doped MgO:LiNbO3 crystals. The spectroscopic properties of Nd ions have been found to be modified only at the nuclear damage region while remaining unaltered at the electronic one. The fluorescence image of the light ion implanted waveguide has been found to be completely different from that obtained by medium-mass ion implantation, revealing the different waveguide formation mechanisms taking place in each case.

Published in:
Applied Physics Letters  (Volume:94 ,  Issue: 1 )

Date of Publication: Jan 2009

Page(s):
011109 - 011109-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3064164
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jan 2009

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