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Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy

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4 Author(s)
Dey, Shirshendu ; Center for Advanced Studies in Materials Science and Solid State Physics, Department of Physics, University of Pune, Pune 411007, India ; Jejurikar, Suhas M. ; Adhi, K.P. ; Dharmadhikari, C.V.

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Charge transport across pulsed laser deposited zinc oxide (ZnO)/aluminum nitride (AlN)/Si(100) thin film structures has been studied using conducting atomic force microscopy at different stages of sample preparation. The spatial coverage of current leakage spots could be directly imaged, characterized, and shown to exhibit hysteresis against applied bias voltage. Current-voltage (I-V) measurements on both AlN and ZnO/AlN/Si(100) structure exhibited asymmetric nonlinear behavior with a large zero current region. Further analysis of I-V and current-force data suggests Fowler–Nordheim like behavior under Hertzian contact as a dominant mechanism for electron transport.

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Applied Physics Letters  (Volume:93 ,  Issue: 9 )