By Topic

Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Ruilong Xie ; Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore ; Nan Wu ; Chen Shen ; Zhu, Chunxiang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2976632 

The energy distribution of interface trap density (Dit) in HfO2 gated germanium metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated by using charge pumping method with variable rise/fall-time measurement. Our results reveal that a high density of interface traps is present in the upper half of the Ge bandgap. As a result, the inversion-layer electron mobility of Ge n-channel MOSFETs was significantly degraded by the Coulomb scatterings. These results are also consistent with the abnormal capacitance-voltage (C-V) characteristics of Ge MOS capacitors.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 8 )