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Fabrication of zinc oxide nanorods based heterojunction devices using simple and economic chemical solution method

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3 Author(s)
Koteeswara Reddy, N. ; School of Semiconductor and Chemical Engineering, BK 21 Center for Future Energy Materials and Devices, Chonbuk National University, Jeonju-561 756, Republic of Korea ; Ahsanulhaq, Q. ; Hahn, Y.B.

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In this letter we reported the behavior of zinc oxide nanorods/gallium nitride (ZnO/GaN) heterojunctions at different temperatures. The well-aligned ZnO nanorods were synthesized on GaN coated alumina (Al2O3) substrate using a solution method at lower temperatures. The as-grown p-n junction diode exhibited a low turn-on voltage of ∼0.65 V with an excellent rectifying behavior. While increasing temperature, the series resistance of the device slightly increased due to the formation of metallic bonds between metal and semiconductor. These results, therefore, emphasize that the as-grown heterostructures are quite stable even at higher temperatures.

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Applied Physics Letters  (Volume:93 ,  Issue: 8 )