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Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

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3 Author(s)
Oshima, R. ; Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan ; Takata, A. ; Okada, Yoshitaka

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2973398 

We have investigated GaAs-based p-i-n quantum dot solar cells (QDSCs) with 10 up to 20 stacked layers of self-assembled InAs quantum dots (QDs) grown by atomic hydrogen-assisted molecular beam epitaxy. The net average lattice strain was minimized by using the strain-compensation technique, in which GaNAs dilute nitrides were used as spacer layers. The filtered short-circuit current density beyond GaAs bandedge was 2.47 mA/cm2 for strain-compensated QDSC with 20 stacks of InAs QD layers, which was four times higher than that for strained QDSC with identical cell structure.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 8 )

Date of Publication:

Aug 2008

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