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Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy

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3 Author(s)
Ulloa, J.M. ; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven, The Netherlands ; Koenraad, P.M. ; Hopkinson, M.

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The nitrogen distribution in GaAsN/GaAs quantum wells (QWs) grown by molecular beam epitaxy is studied on the atomic scale by cross-sectional scanning tunneling microscopy. No nitrogen clustering is observed in the range of N contents studied (between 1.0% and 2.5%, as measured by counting the individual N atoms inside the QW). Nevertheless, the upper interface roughness increases with the amount of N. A residual N concentration in the GaAs barriers is found, which strongly increases with the amount of N in the QW.

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Applied Physics Letters  (Volume:93 ,  Issue: 8 )