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Nonpolar 4H-AlN grown on 4H-SiC (1100) with reduced stacking fault density realized by persistent layer-by-layer growth

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3 Author(s)
Horita, Masahiro ; Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto City, Kyoto 615-8510, Japan ; Kimoto, T. ; Suda, Jun

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Nonpolar AlN layers were grown on 4H-SiC (1100) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1100) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1×106 cm-1.

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Applied Physics Letters  (Volume:93 ,  Issue: 8 )