By Topic

High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Lim, Wantae ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA ; Jang, Jung Hun ; Kim, S.-H. ; Norton, D.P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2975959 

High-performance amorphous (α-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate substrates coated with indium oxide (In2O3) films. The InGaZnO films were deposited by rf magnetron sputtering with the presence of O2 at room temperature. The n-type carrier concentration of InGaZnO film was ∼2×1017 cm-3. The bottom-gate-type TFTs with SiO2 or SiNx gate dielectric operated in enhancement mode with good electrical characteristics: saturation mobility 11.5 cm2V-1s-1 for SiO2 and 12.1 cm2V-1s-1 for SiNx gate dielectrics and drain current on-to-off ratio ≫105. TFTs with SiNx gate dielectric exhibited better performance than those with SiO2. This is attributed to the relatively high dielectric constant (i.e., high-k material) of SiNx. After more than 500 h aging time at room temperature, the saturation mobility of the TFTs with SiO2 gate dielectric was comparable to the as-fabricated value and the threshold voltage shift was 150 mV.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 8 )