Cart (Loading....) | Create Account
Close category search window

Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wang, Q. ; Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom ; Wang, T. ; Bai, J. ; Cullis, A.G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Electron-luminescence (EL) and high-resolution transmission electron microscopy (TEM) measurements have been carried out on the InGaN quantum dot (QD) based light emitting diodes (LEDs) annealed at different temperatures for p-type GaN activation. The annealing temperatures are chosen based on the growth temperature for our InGaN QDs as a reference point. A significant improvement with a factor of up to ∼3.5 in EL intensity has been achieved when the annealing temperature is increased from 720 to 800 °C. However, the EL intensity dramatically decreases if the annealing temperature further increases to 830 °C. In addition, a clear blueshift in EL emission energy has been observed as a result of increasing annealing temperature. In combination with our TEM study, the change in optical properties of the QD based LEDs due to the thermal annealing can be attributed to the shrinkage of the QDs and then eventual mergence into the wetting layer if the annealing temperature is further increased. The data based on detailed driving-current dependent EL measurements also support the conclusion.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 8 )

Date of Publication:

Aug 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.