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Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope

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3 Author(s)
Jayhoon Chung ; Texas Instruments, Dallas, Texas 75243, USA ; Guoda Lian ; Rabenberg, L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2970050 

Local strains in the channel and source/drain (S/D) of an advanced complementary metal-oxide-semiconductor device were measured by the geometric phase analysis applied to high resolution transmission electron microscope images. Two-dimensional strain maps were reconstructed for a 45 nm p-type metal-oxide-semiconductor device which was strain-engineered using a recessed Si0.82Ge0.18 S/D. Lateral strains were uniform across the channel but vertical strains were found to vary considerably in the channel. Measured strains were used to estimate stresses and hole mobility enhancements.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 8 )

Date of Publication:

Aug 2008

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