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Long-time evolution of the photoluminescence in C- and M-plane GaN/AlN quantum dots upon intense ultraviolet irradiation

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6 Author(s)
Brandt, O. ; Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany ; Flissikowski, T. ; Schaadt, D.M. ; Jahn, U.
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We compare the spontaneous emission of C- and M-plane GaN quantum dots embedded in AlN. C-plane dots are characterized by an intense emission with an exceptionally long decay time up to room temperature. In contrast, M-plane dots exhibit a much weaker emission with a very short decay time. In addition, the emission of the C-plane dots temporally evolves on a timescale of seconds, while the emission of the M-plane dots is stable over time. These findings are correlated with the different growth mode and microstructure of C- and M-plane GaN quantum dots.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 8 )

Date of Publication:

Aug 2008

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