Cart (Loading....) | Create Account
Close category search window

Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ruilong Xie ; Silicon Nano Device Laboratory (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore ; Wei He ; Mingbin Yu ; Zhu, Chunxiang

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Effective pregate surface passivation and postgate treatments are very important to optimize the germanium metal-oxide-semiconductor (MOS) interface quality. In this work, pregate GeO2 surface passivation and postgate treatments including CF4-plasma treatment and forming gas annealing are employed to make high quality HfO2 gated germanium MOS capacitors. Excellent electrical characteristics with negligible capacitance-voltage stretch-out and frequency dispersion are achieved. The interface trap density of TaN/HfO2/GeOx/Ge MOS structure is as low as 2.02×1011 cm-2 eV-1 at the minimum. Comparing to the forming gas annealing, it is found that CF4-plasma treatment is more effective to passivate interface states located in the upper half of Ge bandgap.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 7 )

Date of Publication:

Aug 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.