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Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

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4 Author(s)
Ruilong Xie ; Silicon Nano Device Laboratory (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore ; Wei He ; Mingbin Yu ; Zhu, Chunxiang

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Effective pregate surface passivation and postgate treatments are very important to optimize the germanium metal-oxide-semiconductor (MOS) interface quality. In this work, pregate GeO2 surface passivation and postgate treatments including CF4-plasma treatment and forming gas annealing are employed to make high quality HfO2 gated germanium MOS capacitors. Excellent electrical characteristics with negligible capacitance-voltage stretch-out and frequency dispersion are achieved. The interface trap density of TaN/HfO2/GeOx/Ge MOS structure is as low as 2.02×1011 cm-2 eV-1 at the minimum. Comparing to the forming gas annealing, it is found that CF4-plasma treatment is more effective to passivate interface states located in the upper half of Ge bandgap.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 7 )

Date of Publication:

Aug 2008

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