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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:7 Help

Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation

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4 Author(s)
Hoong-Shing Wong ; Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore ; Lap Chan ; Samudra, G. ; Yee-Chia Yeo

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The electron Schottky barrier height ΦBn modulation for NiSi and PtSi formed on selenium-implanted n-type Si (100) has been experimentally investigated. Selenium (Se) segregation is observed at the silicide/n-Si(100) interface during silicidation process. ΦBn of 83 and 120 meV were achieved for Se segregated NiSi and PtSi on n-Si (100) interfaces, respectively. Contrary to previously reported Fermi level depinning effect in monolayer Se-passivated n-Si (100), the low ΦBn achieved in this work points to metal silicide Fermi level pinning near to conduction band EC of n-Si (100).

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 7 )

Date of Publication: Aug 2008

Page(s):
072103 - 072103-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2970958
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 2008

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